Conference Papers

2000 - Present

 

2010 2008 2006
2005 2004 2003
2002 2000 2001
2000
  • C125.  C.V. Thompson, The Effects of Pre-existing Voids on Electromigration Lifetime Scaling, Proc. Solid State Devices and Materials Conference, Tokyo (2010).
  • C124. C.V.Thompson, "Carbon Nanotubes as Interconnects: Emerging Technology and Potential Reliability Issues", 46th International Reliability Symposium, IEEE CFP08RPS-PRT, p. 368 (2008).
  • C123. Z.S.Choi, R. Moenig, C.V. Thompson, and M Burns, "Kinetics of Void Drift in Copper Interconnects”, MRS Symp. Proc. 914, 0914-F08-03 (2006). (Best Student Paper Award)
  • C122. C. V. Thompson, “Effects of Mechanical Properties on the Circuit-Level Reliability of Cu/low-k Metallization”, 8th International Workshop on Stress-Induced Phenomena in Metallization, Dresden.
  • C121. C.V. Thompson, “Nanomaterials in Integrated Circuits”, C.V. Thompson, Proceedings of the symposium on Future Integrated Systems, University of Cambridge, August 2005, published by MTP, p.52 (2005)
  • C120. S. M. Alam, F. L. Wei, C. L. Gan, C. V. Thompson, and D. E. Troxel, "Electromigration Reliability Comparison of Al and Cu Interconnect Technologies", in Proc. of International Symposium on Quality Electronic Design (ISQED), pp. 303-308, March 2005.
  • C119. S. M. Alam, D. E. Troxel, and C. V. Thompson, "Thermal Aware Cell-Based Methodology for Full-Chip Electromigration Reliability Analysis", in Proc. of Great Lakes Symposium on VLSI (GLS-VLSI), pp. 26-31, April, 2005.
  • C118. Z.-S. Choi, C. W. Chang, J. H. Lee, C. L. Gan, C. V. Thompson, K. L. Pey and W. K. Choi, Multi-Via Electromigration Test Structures for Identification and Characterization of Different Failure Mechanisms, MRS Symp. Proc. 863, B9.4 (2005).
  • C117. S. M. Alam, F. L. Wei, C. L. Gan, C. V. Thompson, and D. E. Troxel, "Impact of Non-Blocking Vias on Electromigration and Circuit-Level Reliability Assessments of Interconnects", in Proc. of Advanced Metallization Conference, p. 233, October 2004.
  • C116. A.L. Giermann, C.V. Thompson and H.I Smith, “The Effects of Topography on the Formation of Ordered Arrays of Metallic Nano-particles”, 206th Electrochemical Society Meeting (2004).
  • C115. J. Jia, M. Li, and C.V. Thompson, “Direct TEM observation of Amorphous Si Created by Femtosecond Laser Irradiation”, Proceedings of CLEO 2004, San Francisco, CA (2004).
  • C114. K.Y. Zang, S.J. Chua, C.V. Thompson, L.S. Wang, S. Tripathy, and S.Y. Chow, “The Effect of Periodic Silane Bursts on the Properties of GaN on Si(111) Substrates”, Proceedings of the Materials Research Society 831, E3.33.1 (2004).
  • C113. Z. -S. Choi , C. L. Gan, F. Wei, C. V. Thompson, J. H. Lee, K. L. Pey, and W. K. Choi, “Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects”, Proceedings of the Materials Research Society 812, F7.6.1 (2004).
  • C112. C.W. Chang, C.L. Gan, C.V. Thompson, K.L. Pey, W.K. Choi, N. Hwang, ”Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segment”, Proceedings of the Materials Research Society 812, F7.2.1 (2004).
  • C111. R. Kumar and C.V. Thompson, Templated Self-assembly of Nanoporous Alumina Technique and its Applications, Ramkumar Krishnan, Carl V. Thompson, 206th Electrochemical Society Meeting
  • C110. R. Krishnan, K. Nielsch, H.I. Smith, C.A. Ross, and C.V. Thompson “Highly Ordered, Single-domain Alumina Nanopore and Metallic Nanowire Arrays on Silicon for On-chip Integration of Semiconductor Devices”, 204th Electrochemical society meeting, October 2003, Orlando, FL, USA. (http://www2.electrochem.org/cgibin/abs?mtg=204&abs=0142&type=pdf)
  • C109. Amanda L. Giermann, Carl V. Thompson, and Henry I. Smith, “Templated Formation of Ordered Metallic Nano-Particle Arrays”, Materials Research Society Symposium Proceedings 818, M3.3 (2004).
  • C108. C.V. Thompson, C.L. Gan, S.M. Alam, and D.E. Troxel, “Experiments and Models for Circuit-Level Assessment of the Reliability of Cu Metallization”, Proceedings of the International Interconnect Technology Conference, San Francisco, CA (2004).
  • C107. A.R. Takahashi, C.V. Thompson, and W.C. Carter, “Metallic Island Coalescence: Molecular Dynamics Simulations of Boundary Formation and Tensile Strain in Polycrystalline Thin Films”, Mater. Res. Soc. Symposium Proceedings V. 779, p. 97, W4.5.1 (2003).
  • C106. R. Tadepalli and Carl V Thompson, "Quantitative Characterization and Process Optimization of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits", Proc. of the IEEE 2003 International Interconnect Technology Conference, page 36, IEEE Catalog # 03TH8695, 2003.
  • C105. C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, C. W. Chang and Q. Guo, "Experimental Characterization of the Reliability of Multi-Terminal Dual-Damascene Copper Interconnects”, presented at the 2003 MRS Spring Meeting, Symposium E: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, San Francisco, CA, 2003.
  • C104. C.L. Gan, C.V. Thompson, K.L. Pey, W. K. Choi, C. W. Chang and Q. Guo, Effect of Current Distribution on the Reliability of Multi-Terminal Cu Dual-Damascene Interconnect Trees, Proceedings of the 2003 Int’l. Symposium on Reliability Physics, Dallas, TX.
  • C103. C. L. Gan, F. Wei, C. V. Thompson, K. L. Pey, W. K. Choi, S. P. Hau-Riege and B. Yu, Contrasting Failure Characteristics of Different Levels of Cu Dual-Damascene Metallization, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Rimini, Italy.
  • C102. C. L. Gan, F. Wei, C. V. Thompson, K. L. Pey, W. K. Choi, S. P. Hau-Riege and B. Yu, Contrasting Failure Characteristics of Different Levels of Cu Dual-Damascene Metallization, Proceeding of the 9th Intl. Symp. on Physical and Failure Analysis of Integrated Circuits, Singapore 2002 (Best paper award).
  • C101. F. Wei, C. L. Gan, C. V. Thompson, J. J. Clement, S. P. Hau-Riege, K. L. Pey, W. K. Choi,H. L. Tay, B. Yu, and M. K. Radhakrishnan, Length Effects on the Reliability of Dual-Damascene Cu Interconnects, Proceedings of the Symposium on Silicon Materials-Processing, Characterization, and Reliability, Proceedings of the Materials Research Society, 716 (2002).
  • C100. C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, F. Wei, B. Yu and S. P. Hau-Riege, Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees, Proceedings of the Symposium on Silicon Materials-Processing, Characterization, and Reliability, Proceedings of the Materials Research Society, 716 (2002).
  • C99. C.S. Hau-Riege, C.V. Thompson and T.N. Marieb, The Effects of Width Transitions on the Reliability of Interconnects, 612, D2.8.1 (2000).
  • C98. S.P. Hau-Riege and C. V. Thompson, The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects, MRS Symposium Proceedings, 612, D10.2.1 (2000).
  • C97. M.J. Kobrinsky and C.V. Thompson, Dominant Inelastic Mechanisms in FCC Metallic Thin Films and Lines, to appear in the Proceedings of the 6th International Workshop on Stress-Induced Phenomena, AIP Conference Proceedings, Ithaca, NY, July 2001.
  • C96. M.J. Kobrinsky, C.V. Thompson, and M. E. Gross, Mechanical Behavior of Damascene Cu Lines During Thermal Cycling, Advanced Metallization Conference, San Diego, CA 2000.
  • C95. S.P. Hau-Riege, C.V. Thompson, C.S. Hau-Reige, V.K. Andleigh, Y. Chery and D. Troxel. Circuit-Level and Layout-Specific Interconnect Reliability Assessments, MRS Symposium Proceedings, 612, D2.2.1 (2000).
  • C94. S.P Hau-Riege and C.V. Thompson, Experimental Studies of Reliability of Interconnect Trees, MRS Symposium Proceedings, 612, D8.7.1 (2000).