Journal Publications

Pre 1990

 

1989 1988 1987
1986 1985 1984
1983 1979 1976
  • J40. F. Spaepen and C.V. Thompson, Calorimetric Studies of Reactions in Thin Films and Multilayers, Applied Surface Science 38, p. 1, 1989.
  • J39. J.E. Palmer, G. Burns, C.G. Fonstad, and C.V. Thompson, The Effect of As4 Overpressure on Initial Growth of Gallium Arsenide on Silicon by MBE, Appl. Phys. Letts. 55, p. 990, 1989.
  • J38. P.G. Blauner, Y. Butt, J.S. Ro, C.V. Thompson, and J. Melngailis, Focused Ion Beam Induced Deposition of Low Resistivity Gold Films, J. of Vac. Sci. and Tech. B 7, p. 1816 1989
  • J37. R.R. DeAvillez, L.A. Clevenger, and C.V. Thompson, Relaxation Phenomena in Evaporated Amorphous Silicon Films, Journal of Materials Research 4, p. 1057, 1989.
  • J36. K.R. Coffey, L.A. Clevenger, K Barmak, D.A. Rudman, and C.V. Thompson, Experimental Evidence for Nucleation During Thin Film Reactions, Appl. Phys. Letts. 55, p. 852, 1989.
  • J35. J. Cho and C.V. Thompson, The Grain Size Dependence of Electromigration Induced Failures in Narrow Interconnects, Appl. Phys. Letts. 54, p. 2577, 1989
  • J34. H.A. Atwater, and C.V. Thompson, The Role of Point Defects in Ion-Bombardment-Enhanced and Dopant-Enhanced Grain Growth in Silicon Thin Films, J. of Nuclear Instruments and Methods in Physics Research B 39, 64, 1989.
  • J33. H.A. Atwater, C.V. Thompson, and H.I. Smith, Mechanisms for Crystallographic Orientation in the Crystallization of Thin Silicon Films From the Melt, J. of Materials Research 3, p. 1232, 1988.
  • J32. H.J. Frost, and C.V. Thompson, Computer Simulation of Microstructure Evolution in Thin Films, Journal of Electronic Materials 17, p. 447, 1988.
  • J31. H.A. Atwater, and C.V. Thompson, Point Defect Enhanced Grain Growth in Silicon Thin Films - the Role of Ion Bombardment and Dopants, Appl. Phys. Letts. 53, 2155, 1988.
  • J30. H.A. Atwater, C.V. Thompson, and H.I. Smith, Ion Bombardment Enhanced Grain Growth in Germanium, Silicon and Gold Thin Films, J. Appl. Phys. 64, p. 2337, 1988.
  • J29. H.J. Kim and C.V. Thompson, Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus or Boron, J. Electrochem. Soc. 135, p. 2312, 1988.
  • J28. C.V. Thompson, Coarsening of Particles on a Planar Substrate: Interface Energy Anistropy and Application to Grain Growth in Thin Films, Acta Metallurgica 36, p. 2929, 1988.
  • J27. L.A. Clevenger, C.V. Thompson, R.C. Cammarata, and K.N. Tu, Reaction Kinetics of Nickel/Silicon Multilayer Films, Appl. Phys. Letts. 52, p. 795, 1988.
  • J26. H.A. Atwater, C.V. Thompson, and H.I. Smith, Interface Limited Grain Boundary Motion During Ion Bombardment, Physical Review Letters 60, p. 112, 1988.
  • J25. H.J. Frost, C.V. Thompson, C.L. Howe, and J. Whang, A Two-Dimensional Computer Simulation of Capillary-Driven Grain Growth: Preliminary Results, Scripta Metallurgica 22, p. 65, 1988.
  • J24. R.C. Cammarata, C.V. Thompson, and K.N. Tu, NiSi2 Precipitation in Nickel Implanted Silicon Films, Appl. Phys. Letts. 51, p. 1106, 1987.
  • J23. J.S. Im, H. Tomita, and C.V. Thompson, Cellular and Dendritic Morphologies on Stationary and Moving Liquid-Solid Interfaces in Zone Melting Recrystallization, Appl. Phys. Letts. 51, p. 685, 1987.
  • J22. J.E. Palmer, C.V. Thompson, and H.I. Smith, Grain Growth and Grain Size Distributions in Thin Germanium Films, J. Appl. Phys. 62, p. 2492, 1987.
  • J21. C.V. Thompson and J. Cho, A New Electromigration Test Structure for Rapid Statistical Evaluation of Interconnect Technology, IEEE Electron Device Letters 7, p. 667, 1987.
  • J20. S.M. Garrison, R.C. Cammarata, C.V. Thompson, and H.I. Smith, Surface-Energy-Driven Grain Growth During Rapid Thermal Annealing (<10ns) of Thin Silicon Films, J. Appl. Phys. 61, p. 1652, 1987.
  • J19. C.V. Thompson, H.J. Frost, and F. Spaepen, The Relative Rates of Secondary and Normal Grain Growth, Acta Metallurgica 35, p. 887, 1987.
  • J18. H.J. Frost and C.V. Thompson, The Effect of Nucleation Conditions on the Topology and Geometry of Two-Dimensional Grain Structures, Acta Metallurgica 35, p. 529, 1987.
  • J17. D.J. Srolovitz and C.V. Thompson, Beading Instabilities in Thin Film Lines with Bamboo Microstructures, Thin Solid Films 139, p. 133, 1986.
  • J16. C.C. Wong, H.I. Smith, and C.V. Thompson, Surface-Energy-Driven Secondary Grain Growth in Thin Au Films, Appl. Phys. Letts. 48, p. 335, 1986.
  • J15. H-J. Kim and C.V. Thompson, Compensation of Grain Growth Enhancement in Doped Silicon Films, Appl. Phys. Letts. 48, p. 399, 1986.
  • J14. C.V. Thompson, Secondary Grain Growth in Thin Films of Semiconductors: Theoretical Aspects, J. Appl. Phys. 58, p. 763, 1985.
  • J13. T. Yonehara, H.I. Smith, C.V. Thompson, and J.E. Palmer, Graphoepitaxy of Ge on SiO2 by Solid State Surface-Energy-Driven Secondary Grain Growth, Appl. Phys. Lett. 45, p. 631, 1984.
  • J12. H.A. Atwater, H.I. Smith, C.V. Thompson, and M.W. Geis, Zone Melting Recrystallization of Thick Silicon on Insulator Films, Materials Letters 2, p. 269 1984.
  • J11. C.V. Thompson and H.I. Smith, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (<100nm) Films of Silicon, Appl. Phys. Lett. 44, p. 603, 1984
  • J10. H.I. Smith, C.V. Thompson, and H.A. Atwater, Graphoepitaxy and Zone Melting Recrystallization of Patterned Films, J. Cryst. Growth 65, p. 337, 1983.
  • J9. C.V. Thompson and F. Spaepen, Homogeneous Crystal Nucleation in Binary Metallic Melts, Acta Metallurgica 31, p. 2021, 1983.
  • J8. K.F. Kelton, A.L. Greer, and C.V. Thompson, Transient Nucleation in Condensed Systems, J. Chem. Physics 79, p. 6261, 1983.
  • J7. H.I. Smith, M.W. Geis, C.V. Thompson, and H.A. Atwater, Silicon-on-Insulator by Graphoepitaxy and Zone-Melting Recrystallization of Patterned Films, J. of Crystal Growth 63, p. 527, 1983.
  • J6. H.A. Atwater, C.V. Thompson, H.I. Smith, and M.W. Geis, Orientation Filtering by Growth Velocity Competition in Zone-Melting Recrystallization of Silicon on SiO2, Appl. Phys. Lett. 43, p. 1126, 1983
  • J5. C.V. Thompson, A.L. Greer, and F. Spaepen, Crystal Nucleation in Amorphous (Au100-yCuy)77Si9Ge14 Alloys, Acta Metallurgica 31, p. 1883, 1983.
  • J4. H.I. Smith, C.V. Thompson, M.W. Geis, R.A. Lemons, and MA. Bosch, The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip-Heater Recrystallization, J. Electrochem. Soc. 130, p. 2050, 1983.
  • J3. M.W. Geis, H.I. Smith, D.J. Silversmith, R.W. Mountain, and C.V. Thompson, Solidification-Front Modulation to Entrain Subboundaries in Zone-Melting Recrystallization of Si on SiO2, J. Electrochem. Soc. 130, p. 1179, 1983.
  • J2. C.V. Thompson and F. Spaepen, On the Approximation of the Free Energy Change on Crystallization, Acta Metallurgica 27, p. 1855, 1979.
  • J1. J.O. Farlow, C.V. Thompson, and D.E. Rosner, Plates of the Dinosaur Stegosaurus: Forced Convection Heat Loss Fins?, Science 192, p. 1123, 1976.