1990 - 1999


Journal Publications

1990 - 1999

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1999 1998 1997
1996 1995 1994
1993 1992 1991
1990
  • J99. V.T. Srikar and C.V. Thompson, Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnects, Applied Physics Letters 74, 37 (1999).
  • J98. S.P. Riege, C.V. Thompson, and H.J. Frost, Simulation of the Influence of Particles on Grain Structure Evolution in 2-D Systems and Thin Films, Acta Materialia 47,1879 (1999).
  • J97. W.Fayad, C.V. Thompson, and H.J. Frost, Steady State Grain Size Distributions Resulting from Grain Growth in Two Dimensions, Scripta Mater 40, 1199 (1999).
  • J96. Y.-C. Joo, C.V. Thompson, S.P. Baker, and E. Arzt, Electromigration Proximity Effects of Two Neighboring Fast-Diffusion Segments in Single-Crystal Aluminum Lines, J. Appl. Phys. 85, 2108 (1999).
  • J95. M.J. Kobrinsky and C.V. Thompson, The Thickness Dependence of the Flow Stress of Capped and Uncapped Polycrystalline Ag Thin Films, Applied Physics Letters 73, 2429 (1998).
  • J94. J.J. Clement, S.P. Riege, R. Cvijetic, and C.V. Thompson, Methodology for Electromigration Critical Design Rule Evaluation, IEEE Trans. on CAD of Integrated Circuits and Systems, 18, 576 (1999).
  • J93. V.T. Srikar and C.V. Thompson, The Effect of Al3Ti Capping Layers on Electromigration in Single-Crystal Aluminum Interconnects, Applied Physics Letters 72, 21 (1998).
  • J92. C.V. Thompson, Grain Growth in Polycrystalline Thin Films of Semiconductors, Interface Sciences 6, 85 (1998).
  • J91. S.P. Riege and C.V. Thompson, A Hierarchical Reliability Analysis for Circuit Design Evaluation, IEEE Transactions on Electron Devices 45, 2254 (1998).
  • J90. B.D. Knowlton and C.V. Thompson, Simulation of the Temperature and Current Density Scaling of the Electromigration-Limited Reliability of Near-Bamboo Interconnects, Journal of Materials Research 13, 1164 (1998).
  • J89. Y-J. Park and C.V. Thompson, The Effects of the Stress Dependence of Atomic Diffusivity on Stress Evolution Due to Electromigration, Journal of Applied Physics 82,4277 (1997).
  • J88. A. Gouldstone, Y-L. Shen, S. Suresh, and C.V. Thompson, Evolution of Stresses in Passivated and Unpassivated Metal Interconnects, Journal of Materials Research 13,1956 (1998).
  • J87. Y-C. Joo and C.V. Thompson, Electromigration-Induced Transgranular Failure Mechanisms in Single-Crystal Aluminum Interconnects, Journal of Applied Physics 81 6062, (1997).
  • J86. T. Chiang, H. Sawin, and C.V. Thompson, Surface Kinetic Study of Ion-Induced Chemical Vapor Deposition of Copper, J. of Vacuum Sci. And Tech. A15,3104, (1997).
  • J85. T. Chiang, H. Sawin, and C.V. Thompson, Ion-Induced Chemical Vapor Deposition of High Purity Cu Films at Room Temperature using a Microwave Discharge H Atom Beam Source, J. of Vacuum Sci. and Tech. A15,2677 (1997).
  • J84. B.D. Knowlton, J.J. Clement, and C.V. Thompson, Simulation of the Effects of Grain Structure and Grain Growth on Electromigration and the Reliability of Interconnects, Journal of Applied Physics 81,6073, (1997).
  • J83. H.J. Frost and C.V. Thompson, Computer Simulation of Grain Growth, Current Opinion in Solid State & Materials Science 1,361 (1996).
  • J82. C.V. Thompson and R. Carel, Stress and Grain Growth In Thin Films, J. Mech. Phys. Solids, 44,657 (1996).
  • J81. G. Bochi, C.A. Ballentine, H.E. Inglefield, R.C. O'Handley, and C.V. Thompson, Evidence for Strong Surface Magnetoelastic Anistropy in Epitaxial Cu/Ni/Cu(001) Sandwiches, Physical Review B53,R1729 (1996).
  • J80. R. Carel, C.V. Thompson, H.J. Frost, Computer Simulation of Strain Energy Effects vs. Surface and Interface Energy Effects on Grain Growth In Thin Films, Acta Metal. Mater. 44, 2479 (1996).
  • J79. H.E. Inglefield, G. Bochi, C.A. Ballentine, R.C. O'Handley, C.V. Thompson, Perpendicular Magnetic Anistropy In Epitaxial Cu/Ni/Cu/Si (001) Thin Solid Films 275,155 (1996).
  • J78. G. Bochi, C.A. Ballentine, H.E. Inglefield, C.V. Thompson, R.C. O'Handley, Perpendicular Magnetic Anistropy, Domains, and Misfit Strain in Epitaxial Ni/Cul-xNix/Si (001) Thin Films, Physical Review B52,7311 (1995).
  • J77. J. Funatsu, C.V. Thompson, and J. Melngailis, Laser Assisted Focused-Ion-Beam-Induced Deposition of Copper, Journal of Vacuum Science & Technology B14,179 (1996).
  • J76. C.V. Thompson and R. Carel, Texture Development in Polycrystalline Thin Films, Mat. Sci. and Eng. B32, 211 (1995).
  • J75. J.J. Clement and C.V. Thompson, Modeling Electromigration-Induced Stress Evolution in Confined Metal Lines, Journal of Applied Physics 78 ,900 (1995).
  • J74. Y-C. Joo and C.V. Thompson, Analytic Model for the Grain Structures of Near-Bamboo Interconnects, Journal of Applied Physics 76 ,7339 (1995).
  • J73. J.S. Ro, C.V. Thompson, and J. Melngailis, Microstructure of Gold Grown by Ion Induced Deposition, Thin Solid Films 258,333 (1995).
  • J72. J.S. Ro, C.V. Thompson, and J. Melngailis, Mechanism of Ion Beam Induced Deposition of Gold, J. Vac. Sci. Tech. B12, 1994.
  • J71. J.A. Floro, C.V. Thompson, R. Carel, and P.D. Bristowe, Competition Between Strain and Interface Energy During Epitaxial Grain Growth in Ag Films on Ni (100), J. Mat. Res. 9 p. 2411, 1994.
  • J70. A.D. Della Ratta, J. Melngailis and C.V. Thompson, Focused -Ion Beam Induced Deposition of Copper, J. Vac. Sci. Technol. B 11, p. 2195, 1993.
  • J69. C.V. Thompson and H. Kahn, Effects of Microstructure on Interconnect and Via Reliability: Multimodal Failure Statistics, J. of Electronic Materials 22, p. 581, 1993.
  • J68. C.V. Thompson, Texture Evolution During Grain Growth in Polycrystalline Films, Scripta Metallurgica et Mat. 28, p. 167, 1993.
  • J67. C.V. Thompson, The Yield Stress of Polycrystalline Thin Films, Journal of Materials Research 8, p. 237, 1993.
  • J66. C.V. Thompson, Thinly Spread (Review of The Materials Science of Thin Films by Milton Ohring), Nature 357, p. 292, 1992.
  • J65. J.A. Floro and C.V. Thompson, Numerical Analysis of Interface Energy-Driven Coarsening in Thin Films and Its Connection to Grain Growth, Acta Metallurgica et Materiala 41, p. 1137, 1993.
  • J64. H.P. Longworth and C.V. Thompson, An Experimental Study of Electromigration in Bicrystal Al Lines, Applied Physics Letters 60, p. 2219, 1992.
  • J63. E. Ma, L.A. Clevenger, C.V. Thompson, Nucleation of an Intermetallic at Thin-Film Interfaces, Journal of Materials Research 7, p. 1350, 1992.
  • J62. H.J. Frost, C.V. Thompson, and D.T. Walton, Simulation of Thin Film Grain Structures: II. Abnormal Grain Growth, Acta Metall. 40, p. 779, 1992.
  • J61. E. Jiran, and C.V. Thompson, Capillary Instabilities in Thin Continuous Films, Thin Solid Films 208, p. 23, 1992.
  • J60. H. Kahn and C.V. Thompson, The Effect of Applied Mechanical Stress on the Electromigration Failure Times of Aluminum Interconnects, Appl. Phys. Letters 59, p. 1308, 1991.
  • J59. C.V. Thompson, On the Role of Diffusion in Phase Selection During Reactions at Interfaces, J. Materials Research 7, p. 367, 1992.
  • J58. P.V. Evans, C.V. Thompson, and D.A. Smith, Absence of Electrical Activity at High Angle Grain Boundaries in Zone-Melt-Recrystallised Silicon-On-Insulator Films, Appl. Phys. Letts. 60, p. 439, 1992.
  • J57. A.D. Dubner, A. Wagner, J. Melngailis, and C.V. Thompson, The Role of the Ion/Solid Interaction in Ion Beam Induced Deposition of Gold, J. Appl. Phys. 70, p. 665, 1991.
  • J56. D.T. Walton, H.J. Frost, and C.V. Thompson, The Development of Near-Bamboo and Bamboo Microstructures in Thin Film Strips, Applied Physics Letters 61, p. 40, 1992.
  • J55. E. Ma, C.V. Thompson and L.A. Clevenger, Nucleation and Growth During Reactions in Multilayer Al/Ni Films: The Early Stages of Al3 Ni Formation, Journal of Applied Physics 69, p. 2211, 1991.
  • J54. H. Miura, E. Ma, and C.V. Thompson, Initial Sequence and Kinetics of Silicide Formation in the Cobalt/Amorphous-Silicon Multilayer Thin Films, Journal of Applied Physics 70, p. 4287, 1991.
  • J53. H. Longworth and C.V. Thompson, Abnormal Grain Growth in Aluminum Alloy Thin Films, Journal of Applied Physics 69, p. 3929, 1991.
  • J52. R.C. Cammarata, C.V. Thompson, C. Haydelden, and K.N. Tu, Silicide Precipitation and Silicon Crystallization in Nickel Implanted Amorphous Silicon Thin Films, J. Materials Research, 5, p. 2133, 1990.
  • J51. J. Cho and C.V. Thompson, Electromigration-induced Failures in Interconnects with Bimodal Grain Size Distributions, J. Electronic Materials 19, p. 1207, 1990.
  • J50. E. Ma, C.V. Thompson, L.A. Clevenger, and K.N. Tu, Self-Propagating Explosive Reactions in Al/Ni Multilayer Thin Films, Applied Physics Letters 57, p. 1262, 1990.
  • J49. E. Jiran and C.V. Thompson, Capillary Instabilities in Thin Films, J. Electronic Materials 19, p. 1153, 1990.
  • J48. H.J. Frost, C.V. Thompson, D.T. Walton, Simulation of Thin Film Grain Structures: I. Grain Growth Stagnation, Acta Metallurgica et Materiala 38, p. 1455, 1990.
  • J47. C.V. Thompson, Grain Growth in Thin Films, Annual Review of Materials Science 20, p. 245, 1990.
  • J46. L.A. Clevenger, C.V. Thompson, R.R. De Avillez, and E. Ma, Nucleation Controlled Phase Selection in Vanadium/Amorphous-Silicon Multilayer Thin Films, J. Vac. Sci. and Tech. A 8, p. 1566, 1990.
  • J45. C.V. Thompson, J. Floro, and H.I. Smith, Epitaxial Grain Growth in Thin Metal Films, J. Appl. Phys. 67 (9), p. 4099, May 1990.
  • J44. L.A. Clevenger, and C.V. Thompson, Explosive Silicidation in Nickel/Amorphous-Silicon Multilayer Thin Films, J. Appl. Phys. 67, p. 2894, 1990.
  • J43. L.A. Clevenger, and C.V. Thompson, Nucleation Limited Phase Selection During Reactions in Nickel Amorphous-Silicon Multilayer Thin Films, J. Appl. Phys. 67, p. 1325, 1990.
  • J42. H-J. Kim and C.V. Thompson, The Effects of Dopants on Surface-Energy-Driven Secondary Grain Growth in Silicon Films, J. Appl. Phys. 67, p. 757, 1990.
  • J41. R.R. De Avillez, L.A. Clevenger, C.V. Thompson and K.N. Tu, Quantitative Investigation of Titanium/Amorphous-Silicon Multilayer Thin Film Reactions, J. of Materials Research 5, p. 593, 1990.
  • J108. J. Greiser, P. Mullner, C.V. Thompson, and E. Arzt, Growth of Giant Grains in Silver Thin Films, Scripta Materialia 41, 709 (1999).
  • J106. C.V. Thompson, On the Grain Size and Coalescence Stress Resulting From Nucleation and Growth Processes During Formation of Polycrystalline Thin Films, J. Mater Res. 14, 3164 (1999).
  • J105. V.K. Andleigh, V.T. Srikar, Y.T. Park, and C.V. Thompson, Mechanism Maps for Electrmigration-Induced Failure of Metal and Alloy Interconnects, J. Appl. Phys. 86, 6737 (1999).
  • J104. C.S. Hau-Riege and C.V. Thompson, Microstructural Evolution Induced by Scanned Laser Annealing in Al Interconnects, Appl. Phys. Let. 75, 1464 (1999).
  • J103. Y.-J. Park, V.K. Andleigh, and C.V. Thompson, Simulations of Stress Evolution and the Current-density Scaling of Electromigration-Induced failure Times in Pure and Alloyed Interconnects, J. Appl. Phys. 85, 3546 (1999).
  • J102. H. Gao, L. Zhang, W.D. Nix, C.V. Thompson, and E. Arzt, Crack-Like Grain Boundary Diffusion Wedges in Thin Metal Films, Acta Materialia 47, 2865 (1999).
  • J101. S.P. Riege and C.V. Thompson, Modeling of Texture Evolution in Copper Interconnects Annealed in Trenches, Scripta Materialia 41, 403 (1999).
  • J100. V.T. Srikar and C.V. Thompson, Dislocation Pile-ups as Sites for Formation of Electromigration-Induced Transgranular Slit-Like Voids in Interconnects, Scripta Materialia 42, 97 (2000).